Magnetic and electronic properties of Cu1−xFexO from first principles calculations
Abstract
Magnetic and electronic properties of Cu1−xFexO systems with x = 6.25% and 12.5% have been investigated using first principles calculations. The ground state of CuO is an antiferromagnetic insulator. At x = 6.25%, Cu1−xFexO systems with Fe on 2 and 4 substitution positions are half-metallic due to the strong hybridization among Fe, the nearest O and Cu atoms, which may come from the double exchange coupling between Fe2+–O2−–Cu2+. At x = 12.5%, Cu1−xFexO system with Fe on 9–11 position has a strong spin polarization near the Fermi level and the system energy is lowest when the doped two Fe atoms form ferromagnetic configuration. This indicates the two doped Fe atoms