Inkjet printing of palladium source and drain electrodes on individual single-wall carbon nanotubes to fabricate field effect transistors

Abstract

Field effect transistors (FETs) have been fabricated on individual single-wall carbon nanotubes by inkjet printing of source and drain electrodes using palladium nanoparticles. The FETs display p-type semiconducting characteristics, whereas subsequent thermal annealing shows that both hole-doping and Schottky contacts have an influence on the electrical transport. The data show that inkjet printing is a viable tool for the facile fabrication of single-tube nanoelectronics.