Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

Thomas P. Brennan; Orlando Trejo; Katherine E. Roelofs; John Xu; Fritz B. Prinz; Stacey F. Bent

doi:10.1039/C3TA10903H

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Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al₂O₃ barrier layer†

Thomas P. Brennan,‡^a Orlando Trejo,‡^b Katherine E. Roelofs,^ac John Xu,^b Fritz B. Prinz^bc and Stacey F. Bent*^a

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* Corresponding authors

^a Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
E-mail: sbent@stanford.edu

^b Department of Mechanical Engineering, Stanford University, Stanford, CA 94305, USA

^c Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA

Abstract

Atomic layer deposition (ALD) was used to grow both PbS quantum dots and Al₂O₃ barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes.

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Article information

DOI: https://doi.org/10.1039/C3TA10903H
Article type: Communication
Submitted: 04 Mar 2013
Accepted: 20 May 2013
First published: 29 May 2013

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J. Mater. Chem. A, 2013,1, 7566-7571

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Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al₂O₃ barrier layer

T. P. Brennan, O. Trejo, K. E. Roelofs, J. Xu, F. B. Prinz and S. F. Bent, J. Mater. Chem. A, 2013, 1, 7566 DOI: 10.1039/C3TA10903H

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Journal of Materials Chemistry A