Contact printing of horizontally aligned Zn2GeO4 and In2Ge2O7nanowire arrays for multi-channel field-effect transistors and their photoresponse performances
Abstract
The ternary
* Corresponding authors
a
Michael Gratzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
E-mail:
gzshen@mail.hust.edu.cn, dichen@mail.hust.edu.cn
Fax: +86 27 87792225
The ternary
Z. Liu, B. Liang, G. Chen, G. Yu, Z. Xie, L. Gao, D. Chen and G. Shen, J. Mater. Chem. C, 2013, 1, 131 DOI: 10.1039/C2TC00055E
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content