Temperature tolerance study of high performance electrochemically gated SnO2 nanowire field-effect transistors

Babak Nasr; Zhirong Zhao-Karger; Di Wang; Robert Kruk; Horst Hahn; Subho Dasgupta

doi:10.1039/C3TC00061C

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Temperature tolerance study of high performance electrochemically gated SnO₂nanowire field-effect transistors†

Babak Nasr,^ab Zhirong Zhao-Karger,^a Di Wang,^a Robert Kruk,^a Horst Hahn^abc and Subho Dasgupta*^a

Author affiliations

* Corresponding authors

^a Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344 Eggenstein-Leopoldshafen, Germany
E-mail: subho.dasgupta@kit.edu
Fax: +49 721-608-26368
Tel: +49 721-608-23109

^b KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Petersenstr. 32, D-64287 Darmstadt, Germany

^c Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Str. 1a, 76131 Karlsruhe, Germany

Abstract

Electrochemically gated field-effect transistors are fabricated with single crystalline SnO₂ nanowires as a transistor channel. Excellent transistor performance and a very low-voltage operation (≤2 V) have been demonstrated. Thermal stability of the FETs is systematically examined up to 180 °C; while unchanged transistor characteristics are obtained up to 70 °C; short exposure at 110 °C is also found permissible, making such devices compatible to be integrated directly to organic photovoltaics or to various biomedical appliances.

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Article information

DOI: https://doi.org/10.1039/C3TC00061C
Article type: Communication
Submitted: 09 Jan 2013
Accepted: 25 Feb 2013
First published: 26 Feb 2013

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J. Mater. Chem. C, 2013,1, 2534-2539

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Temperature tolerance study of high performance electrochemically gated SnO₂ nanowire field-effect transistors

B. Nasr, Z. Zhao-Karger, D. Wang, R. Kruk, H. Hahn and S. Dasgupta, J. Mater. Chem. C, 2013, 1, 2534 DOI: 10.1039/C3TC00061C

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Journal of Materials Chemistry C