Ab initio study of electronic and optical behavior of two-dimensional silicon carbide†
Abstract
Two-dimensional
* Corresponding authors
a
Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
E-mail:
yangxu-isee@zju.edu.cn
b The Electromagnetics Academy at Zhejiang University, Zhejiang University, Hangzhou 310027, P. R. China
c State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. China
d Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, P. R. China
e Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK
f Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
g College of Nanoscale Science and Engineering, State University of New York, Albany, New York 12203, USA
Two-dimensional
X. Lin, S. Lin, Y. Xu, A. A. Hakro, T. Hasan, B. Zhang, B. Yu, J. Luo, E. Li and H. Chen, J. Mater. Chem. C, 2013, 1, 2131 DOI: 10.1039/C3TC00629H
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