Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors

Abstract

Nanosheet transistors based on mechanically exfoliated MoS₂ and other transition metal dichalcogenide layers have already been reported demonstrating good device performances. In an approach to synthesize a large area two-dimensional (2D) sheet, chemical vapor deposition methods were reported and the transfer of those sheets onto other arbitrary substrates was also attempted, although studies on the direct imprinting of such 2D semiconductor sheets are rare. Here, we report on a direct imprinting method, the polydimethylsiloxane (PDMS)-adopting approach, that enables the fabrication of patterned bottom-gate MoS₂ nanosheet field-effect transistors (FETs) on any substrate; using direct printing methods MoS₂ FETs were successfully fabricated on glass. Since our FETs were also controlled to be a depletion or an enhanced mode with the modulated MoS₂ thickness on a patterned bottom-gate, our imprinting approach is regarded as a meaningful advance toward 2D nanosheet electronics.