Issue 3, 2014
From the journal:

Chemical Communications

Chemically doped perylene diimide lamellae based field effect transistor with low operating voltage and high charge carrier mobility†

Arulraj Arulkashmir,‡a   Bhanprakash Jain,‡a   Jino C. John,a   Kanak Roya  and  Kothandam Krishnamoorthy*a  

* Corresponding authors

a Polymer science and engineering division, CSIR-National Chemical Laboratory, CSIR-Network Institutes of Solar Energy, Dr Homi Bhabha Road, Pune-411008, India
E-mail: k.krishnamoorthy@ncl.res.in
Tel: +91-20-25903075

Abstract

Chemical doping of an electron transporter results in the formation of a radical anion containing semiconductor which showed high electron mobility (13 cm2 V−1 s−1) at low operating voltage (1 V).

Graphical abstract: Chemically doped perylene diimide lamellae based field effect transistor with low operating voltage and high charge carrier mobility

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Article information

DOI
https://doi.org/10.1039/C3CC45391J
Article type
Communication
Submitted
16 Jul 2013
Accepted
25 Oct 2013
First published
28 Oct 2013

Chem. Commun., 2014,50, 326-328

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Chemically doped perylene diimide lamellae based field effect transistor with low operating voltage and high charge carrier mobility

A. Arulkashmir, B. Jain, J. C. John, K. Roy and K. Krishnamoorthy, Chem. Commun., 2014, 50, 326 DOI: 10.1039/C3CC45391J

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