Issue 24, 2014
From the journal:

Chemical Communications

A bis(2-oxoindolin-3-ylidene)-benzodifuran-dione containing copolymer for high-mobility ambipolar transistors†

Guobing Zhang,*a   Peng Li,ab   Longxiang Tang,b   Jingxuan Ma,b   Xianghua Wang,a   Hongbo Lu,a   Boseok Kang,c   Kilwon Choc  and  Longzhen Qiu*a  

* Corresponding authors

a Key Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, China
E-mail: gbzhang@hfut.edu.cn, lzqiu@ustc.edu
Fax: +86 (0)551 62902572

b Department of Polymer Science and Engineering, School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, China

c Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Korea

Abstract

A bis(2-oxoindolin-3-ylidene)-benzodifuran-dione (BIBDF)-based low band gap polymer (PBIBDF-BT), containing a solubilizing alkyl chain bithiophene unit as a donor, has been synthesized. The polymer with a low-lying LUMO/HOMO energy level (−4.03/−5.55 eV) exhibits efficient ambipolar charge transport. The electron and hole mobilities are as high as 1.08 and 0.30 cm2 V−1 s−1, respectively.

Graphical abstract: A bis(2-oxoindolin-3-ylidene)-benzodifuran-dione containing copolymer for high-mobility ambipolar transistors

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Article information

DOI
https://doi.org/10.1039/C3CC48695H
Article type
Communication
Submitted
14 Nov 2013
Accepted
16 Jan 2014
First published
23 Jan 2014

Chem. Commun., 2014,50, 3180-3183

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A bis(2-oxoindolin-3-ylidene)-benzodifuran-dione containing copolymer for high-mobility ambipolar transistors

G. Zhang, P. Li, L. Tang, J. Ma, X. Wang, H. Lu, B. Kang, K. Cho and L. Qiu, Chem. Commun., 2014, 50, 3180 DOI: 10.1039/C3CC48695H

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