Group III–V semiconductors are important in the production of a variety of optoelectronic devices. At present, these semiconductors are synthesized by high vacuum techniques. Here we report on the electrochemical deposition of GaN which seems to form in quite a thin layer from NH4Cl and GaCl3 in an ionic liquid.
A. Lahiri, N. Borisenko, A. Borodin and F. Endres, Chem. Commun., 2014, 50, 10438 DOI: 10.1039/C4CC03649B
This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.
To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Please wait while we load your content...
