Issue 78, 2014
From the journal:

Chemical Communications

Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s†

Wenbin Zhang,‡ab   Cheng Wang,‡c   Gang Liu,*a   Jun Wang,b   Yu Chen*c  and  Run-Wei Li*a  

* Corresponding authors

a Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
E-mail: liug@nimte.ac.cn, runweili@nimte.ac.cn

b Department of Physics, Ningbo University, Ningbo 315211, China

c Institute of Applied Chemistry, East China University of Science and Technology, Shanghai, China
E-mail: chentangyu@yahoo.com

Abstract

Linear and hyperbranched poly(azomethine)s (PAMs)-based on triphenylamine moieties are synthesized and used as the functioning layers in the Ta/PAM/Pt resistive switching memory devices. Comparably, the hyperbranched PAM with isotropic architecture and semi-crystalline nature shows enhanced memory behaviors with more uniform distribution of the HRS and LRS resistances.

Graphical abstract: Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s

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Article information

DOI
https://doi.org/10.1039/C4CC05233A
Article type
Communication
Submitted
08 Jul 2014
Accepted
30 Jul 2014
First published
30 Jul 2014

Chem. Commun., 2014,50, 11496-11499

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Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s

W. Zhang, C. Wang, G. Liu, J. Wang, Y. Chen and R. Li, Chem. Commun., 2014, 50, 11496 DOI: 10.1039/C4CC05233A

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