Issue 17, 2014

Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

Abstract

For the first time, high quality SnSe nanowires were synthesized via chemical vapour deposition (CVD). The synthesized SnSe nanowires are single crystalline. The length of the nanowires is in tens of microns with an average diameter of about 30–40 nm. Further, the optical and electrical properties reveal the potential of SnSe nanowires for photovoltaic and optical devices. These studies will enable significant advancements of the next generation photodetection and solar cell applications.

Graphical abstract: Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

Supplementary files

Article information

Article type
Communication
Submitted
04 Feb 2014
Accepted
12 Feb 2014
First published
12 Feb 2014

CrystEngComm, 2014,16, 3470-3473

Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

F. K. Butt, M. Mirza, C. Cao, F. Idrees, M. Tahir, M. Safdar, Z. Ali, M. Tanveer and I. Aslam, CrystEngComm, 2014, 16, 3470 DOI: 10.1039/C4CE00267A

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