Issue 46, 2014

Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures

Abstract

Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon–silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

Graphical abstract: Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures

Supplementary files

Article information

Article type
Paper
Submitted
07 Jul 2014
Accepted
08 Sep 2014
First published
09 Sep 2014

Phys. Chem. Chem. Phys., 2014,16, 25273-25279

Author version available

Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures

A. Mughal, J. K. El Demellawi and S. Chaieb, Phys. Chem. Chem. Phys., 2014, 16, 25273 DOI: 10.1039/C4CP02966F

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