Issue 4, 2014
From the journal:

Materials Horizons

Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance†

Pei-Yang Gu,ab   Junkuo Gao,c   Cai-Jian Lu,a   Wangqiao Chen,bd   Chengyuan Wang,b   Gang Li,b   Feng Zhou,a   Qing-Feng Xu,*a   Jian-Mei Lu*a  and  Qichun Zhang*bd  

* Corresponding authors

a College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China
E-mail: lujm@suda.edu.cn, xuqingfeng@suda.edu.cn
Fax: +86 512 65880367
Tel: +86 512 65880368

b School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
E-mail: qczhang@ntu.edu.sg

c The Key Laboratory of Advanced Textile Materials and Manufacturing Technology of Ministry of Education, College of Materials and Textiles, Zhejiang Sci-Tech University, Hangzhou 310018, China

d Institute for Sports Research, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

Abstract

To achieve ultra-high density memory devices with a capacity of 3n or larger, a novel larger and stable oxacalix[4]arene, 4N4OPz, is reported. 4N4OPz exhibited excellent ternary memory behavior with high ON2/ON1/OFF current ratios of 108.7/104.2/1, low switching threshold voltage of −1.80 V/−2.87 V, and good stability for these three states.

Graphical abstract: Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

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Article information

DOI
https://doi.org/10.1039/C4MH00022F
Article type
Communication
Submitted
30 Jan 2014
Accepted
16 Apr 2014
First published
16 Apr 2014

Mater. Horiz., 2014,1, 446-451

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Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

P. Gu, J. Gao, C. Lu, W. Chen, C. Wang, G. Li, F. Zhou, Q. Xu, J. Lu and Q. Zhang, Mater. Horiz., 2014, 1, 446 DOI: 10.1039/C4MH00022F

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