Issue 63, 2014

Texturing of pure and doped CeO2 thin films by EBPVD through target engineering

Abstract

In this paper, we report the effect of annealing temperature of target on the texture of thin films coated by electron beam physical vapor deposition method. Nanocrystalline cerium oxide (CeO2) and 20 mol% samarium doped cerium oxide (SDC) powders, compacted into pellets, were used as targets after annealing at 300, 500 and 800 °C. Grain size analysis of the target by X-ray diffraction showed a size range of 12–52 nm and 9–22 nm for CeO2 and SDC, respectively. Texture coefficient calculation from glancing incident X-ray diffraction showed a preferential orientation of (111) in CeO2 films. However SDC films exhibited (200) orientation grown at the expense of (111) which resulted in higher residual strain with annealing temperature. The pole figure analysis elucidated smaller in-plane misorientation in CeO2 than in SDC films. Under similar deposition conditions, difference in textured growth between CeO2 and SDC is primarily induced by vapor pressure modifications associated with the annealing temperature of the target. Raman and X-ray photoelectron spectroscopic studies of the films indicate the presence of higher oxygen vacancy concentration in SDC as well as a decrease in Ce3+ concentration with target annealing temperature.

Graphical abstract: Texturing of pure and doped CeO2 thin films by EBPVD through target engineering

Supplementary files

Article information

Article type
Paper
Submitted
10 May 2014
Accepted
14 Jul 2014
First published
18 Jul 2014

RSC Adv., 2014,4, 33338-33346

Texturing of pure and doped CeO2 thin films by EBPVD through target engineering

P. Arunkumar, R. Ramaseshan, S. Dash, J. Basu, T. R. Ravindran, S. Balakumar and K. S. Babu, RSC Adv., 2014, 4, 33338 DOI: 10.1039/C4RA04353G

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