Issue 97, 2014
From the journal:

RSC Advances

Multi-channel ferroelectric-gate field effect transistors with excellent performance based on ZnO nanofibers

H. J. Song,ab   D. Lv,ab   J. B. Wang,*ab   B. Li,*ab   X. L. Zhong,ab   L. H. Jiaab  and  F. Wangab  

* Corresponding authors

a School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
E-mail: jbwang@xtu.edu.cn, bli@xtu.edu.cn

b Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan 411105, Hunan, China

Abstract

Bottom-gate multi-channel ferroelectric-gate field effect transistors (FETs) based on ZnO nanofibers were fabricated, using Bi3.15Nd0.85Ti3O12 (BNT) thin film as the gate insulator and ZnO nanofibers as the semiconductor multi-channel. The electrical characteristics of the multi-channel ZnO nanofiber ferroelectric-gate FETs showed typical p-channel transistor properties with a low threshold voltage of −0.5 V, a high effective field effect mobility, and a large on/off current ratio of 104. These excellent performances are attributed to the multi-channel ZnO nanofiber and BNT ferroelectric-gate insulator.

Graphical abstract: Multi-channel ferroelectric-gate field effect transistors with excellent performance based on ZnO nanofibers

About
Cited by
Related
Download options Please wait...

Article information

DOI
https://doi.org/10.1039/C4RA04937C
Article type
Paper
Submitted
25 May 2014
Accepted
15 Oct 2014
First published
20 Oct 2014

RSC Adv., 2014,4, 54924-54927

Permissions

Request permissions

Multi-channel ferroelectric-gate field effect transistors with excellent performance based on ZnO nanofibers

H. J. Song, D. Lv, J. B. Wang, B. Li, X. L. Zhong, L. H. Jia and F. Wang, RSC Adv., 2014, 4, 54924 DOI: 10.1039/C4RA04937C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements