Issue 98, 2014
From the journal:

RSC Advances

The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δ epitaxial films

Haoliang Huang,abc   Zhenlin Luo,*bc   Yuanjun Yang,bc   Mengmeng Yang,bc   Haibo Wang,bc   Guoqiang Pan,b   Yalin Luc  and  Chen Gao*abc  

* Corresponding authors

a Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
E-mail: cgao@ustc.edu.cn

b National Synchrotron Radiation Laboratory & Collaborative Innovation Centre of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
E-mail: zlluo@ustc.edu.cn

c CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, China

Abstract

Ultrathin Sm0.6Nd0.4NiO3−δ epitaxial films were deposited by pulsed laser deposition (PLD) onto LaAlO3 (LAO) single crystal substrates. The influence of growth oxygen pressure on the metal–insulator transition (MIT) was investigated. It was found that the MI transition temperature (TMI) of the films decreases remarkably with the decrease of the growth oxygen pressure, while the films' strain state stays almost the same. The increased oxygen vacancies induced by lower growth oxygen pressure, verified by X-ray photoelectron spectroscopy, seem to be the main cause of such phenomena.

Graphical abstract: The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δ epitaxial films

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Article information

DOI
https://doi.org/10.1039/C4RA09535A
Article type
Paper
Submitted
31 Aug 2014
Accepted
21 Oct 2014
First published
21 Oct 2014

RSC Adv., 2014,4, 55082-55086

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The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δ epitaxial films

H. Huang, Z. Luo, Y. Yang, M. Yang, H. Wang, G. Pan, Y. Lu and C. Gao, RSC Adv., 2014, 4, 55082 DOI: 10.1039/C4RA09535A

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