Issue 74, 2015
From the journal:

Chemical Communications

Modulation of sulfur partial pressure in sulfurization to significantly improve the photoelectrochemical performance over the Cu2ZnSnS4 photocathode†

Yuanfang Zhang,ab   Shuxin Ouyang,*abc   Qing Yu,d   Peng Lid  and  Jinhua Yeabcd  

* Corresponding authors

a TU-NIMS Joint Research Center, School of Materials Science and Engineering, Tianjin University, Tianjin 300072, P. R. China
E-mail: oysx@tju.edu.cn

b Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 30072, P. R. China

c Tianjin Key Laboratory of Composite and Functional Materials, and Key Lab of Advanced Ceramics and Machining Technology, Ministry of Education, Tianjin 300072, P. R. China

d International Center for Materials Nanoarchitectonics (WPI-MANA) and Environmental Remediation Materials Unit, National Institute for Materials Science (NIMS), Japan

Abstract

Cu2ZnSnS4 photocathodes with excellent photoelectrochemical properties were fabricated via a facile method of adjusting the sulfur partial pressure in a semi-closed system, which achieved a maximum photocurrent-density of 1.8 mA cm−2 under irradiation of a solar simulator which is 9-fold larger than that synthesized in an open system.

Graphical abstract: Modulation of sulfur partial pressure in sulfurization to significantly improve the photoelectrochemical performance over the Cu2ZnSnS4 photocathode

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Article information

DOI
https://doi.org/10.1039/C5CC04812E
Article type
Communication
Submitted
11 Jun 2015
Accepted
28 Jul 2015
First published
28 Jul 2015

Chem. Commun., 2015,51, 14057-14059

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Modulation of sulfur partial pressure in sulfurization to significantly improve the photoelectrochemical performance over the Cu2ZnSnS4 photocathode

Y. Zhang, S. Ouyang, Q. Yu, P. Li and J. Ye, Chem. Commun., 2015, 51, 14057 DOI: 10.1039/C5CC04812E

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