Partial pressure-induced growth of silicon nitride belts with tunable width and photoluminescence properties

J. Cai; Y. L. Zhang; Z. Y. Lyu; J. Zhao; J. C. Shen; Q. Wu; X. Z. Wang; X. L. Wu; Y. Chen; Z. Hu

doi:10.1039/C4CE01903B

Partial pressure-induced growth of silicon nitride belts with tunable width and photoluminescence properties†

J. Cai,^ab Y. L. Zhang,^ab Z. Y. Lyu,^ab J. Zhao,^ab J. C. Shen,^c Q. Wu,^ab X. Z. Wang,*^ab X. L. Wu,*^c Y. Chen^ab and Z. Hu^ab

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* Corresponding authors

^a Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, PR China
E-mail: wangxzh@nju.edu.cn

^b High-Tech Research Institute of Nanjing University (Suzhou), Suzhou, Jiangsu, China

^c Key Laboratory of Modern Acoustics of MOE, Institute of Acoustics, Department of Physics, Nanjing 210093, Jiangsu, PR China
E-mail: hkxlwu@nju.edu.cn

Abstract

α- and β-Si₃N₄ belts with tunable width were synthesized by regulating the partial pressure of NH₃/N₂ in gaseous mixtures of Ar and NH₃/N₂ during the nitridation of silicon powders, which demonstrated tunable photoluminescence properties.

CrystEngComm

Partial pressure-induced growth of silicon nitride belts with tunable width and photoluminescence properties†

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Partial pressure-induced growth of silicon nitride belts with tunable width and photoluminescence properties

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