Retracted Article: Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays

Abstract

A multiferroic BiMnO₃ nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO₃/Ti structure at room temperature.