Infrared nonlinear optical properties of lithium-containing diamond-like semiconductors Li2ZnGeSe4 and Li2ZnSnSe4

Abstract

Two new lithium-containing diamond-like semiconductors, Li₂ZnGeSe₄ and Li₂ZnSnSe₄, have been prepared by high-temperature, solid-state synthesis. Single crystal X-ray diffraction reveals that both compounds adopt the wurtz–kesterite structure type, crystallizing in the noncentrosymmetric space group Pn. X-ray powder diffraction coupled with Rietveld refinement indicates the high degree of phase purity in which the materials are prepared. Both compounds display optical bandgaps around 1.8 eV, wide optical transparency windows from 0.7 to 25 μm and type-I phase matched second harmonic generation starting at 2500 nm and persisting deeper into the infrared. Using the Kurtz powder method, the second-order nonlinear optical coefficient, χ⁽²⁾, was estimated to be 19 and 23 pm V⁻¹ for Li₂ZnGeSe₄ and Li₂ZnSnSe₄, respectively. Using a 1064 nm incident laser beam with a pulse width (τ) of 30 ps both compounds exhibit a laser damage threshold of 0.3 GW cm⁻², which is higher than that of the AgGaSe₂ reference material measured under identical conditions. Differential thermal analysis shows that the title compounds are stable up to 684 and 736 °C, respectively. These properties collectively demonstrate that Li₂ZnGeSe₄ and Li₂ZnSnSe₄ have great potential for applications in tunable laser systems, especially in the infrared and even up to the terahertz regime. Electronic structure calculations using a plane-wave pseudopotential method within density functional theory provide insight regarding the nature of the bandgap and bonding.