Issue 24, 2015

(n,m) Assignments and quantification for single-walled carbon nanotubes on SiO2/Si substrates by resonant Raman spectroscopy

Abstract

The single-walled carbon nanotubes (SWNTs) on silicon substrates are a promising candidate for the next generation of electronic and photoelectronic devices, therefore an easy, convenient, and nondestructive method for characterizing such samples is quite important and strongly needed. In this study, we provide in detail such a method to assign (n,m) indices with considerable accuracy through resonant Raman spectra analysis. We developed an equation of ωRBM = 235.9/dt + 5.5 for SWNTs grown by Ni, Co, and Fe catalysts on SiO2/Si substrates in the dt range of 1.2–2.1 nm. This method was further utilized to make (n,m) assignments and quantification for our SWNTs catalyzed by W6Co7, which is highly enriched with (12,6). The less abundant chiralities in the samples were also assigned and the contents were analyzed using a counting-based method. Moreover, these chirality-specified samples allowed us to collect 1330 RBM data for the single chirality (12,6) and the RBM variation was found to be no larger than ±2.5 cm−1. A step-by-step procedure is also provided as a general guide for (n,m) assignments.

Graphical abstract: (n,m) Assignments and quantification for single-walled carbon nanotubes on SiO2/Si substrates by resonant Raman spectroscopy

Supplementary files

Article information

Article type
Paper
Submitted
14 Feb 2015
Accepted
12 May 2015
First published
14 May 2015

Nanoscale, 2015,7, 10719-10727

Author version available

(n,m) Assignments and quantification for single-walled carbon nanotubes on SiO2/Si substrates by resonant Raman spectroscopy

D. Zhang, J. Yang, F. Yang, R. Li, M. Li, D. Ji and Y. Li, Nanoscale, 2015, 7, 10719 DOI: 10.1039/C5NR01076D

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