Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor

Abstract

In this paper we present atomic layer deposition (ALD) of zinc nitride thin films using diethylzinc (DEZ) and ammonia (NH₃). Density Functional Theory (DFT) is used to calculate the atomistic reaction pathway. The self-limiting growth characteristic is verified at 315 °C. Saturated growth rate is found to be 0.9 Å per ALD cycle. The as deposited films are found to be polycrystalline with preferential orientation in the {321} direction. The performance of the material is further investigated as channel layer in thin film transistor (TFT) applications.