Issue 13, 2015
From the journal:

RSC Advances

Temperature stress on a thin film transistor with a novel BaZnSnO semiconductor using a solution process

Jun Li,*ab   Chuan-Xin Huang,a   Jian-Hua Zhang,*b   Wen-Qing Zhu,a   Xue-Yin Jianga  and  Zhi-Lin Zhangab  

* Corresponding authors

a School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China
E-mail: lijun_yt@163.com

b Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
E-mail: jhzhang@staff.shu.edu.cn

Abstract

We have fabricated novel BaZnSnO-TFT using a solution process and investigated the electrical performance and temperature stability. BaZnSnO-TFT shows an improved field-effect mobility of 3.2 cm2 V−1 s−1, a subthreshold swing of 0.61 V per decade and an on/off current ratio of 2 × 107 compared to those of ZnSnO-TFT. Density of state distribution of BaZnSnO and ZnSnO semiconductor has been extracted from electrical measurements. BaZnSnO-TFT shows an improved electrical performance and temperature stability due to smaller oxygen vacancies, less bulk trap density and interface state density.

Graphical abstract: Temperature stress on a thin film transistor with a novel BaZnSnO semiconductor using a solution process

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Article information

DOI
https://doi.org/10.1039/C4RA14222E
Article type
Paper
Submitted
10 Nov 2014
Accepted
05 Jan 2015
First published
05 Jan 2015

RSC Adv., 2015,5, 9621-9626

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Temperature stress on a thin film transistor with a novel BaZnSnO semiconductor using a solution process

J. Li, C. Huang, J. Zhang, W. Zhu, X. Jiang and Z. Zhang, RSC Adv., 2015, 5, 9621 DOI: 10.1039/C4RA14222E

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