Ohmic contact of indium oxide as transparent electrode to n-type indium phosphide

Abstract

Ohmic contacts of n-type indium phosphide (n-InP) with indium oxide (In₂O₃), a transparent conducting oxide (TCO), have been achieved. Hydrogen plasma surface pretreatment of the n-InP substrates (H₂-cleaned n-InP) prior to the deposition of In₂O₃ films, is the key to achieve Ohmic contact. Oxygen flow rate during the In₂O₃ film deposition, which equivalently determines its doping level, is the main tuning parameter for In₂O₃ thin films growth. Rapid thermal annealing process (RTP) at different temperatures was found to have little effects on the Ohmic contact type.