Issue 47, 2015

The energy band tailored by Al incorporation in solution-processed IZO TFTs

Abstract

The energy band tailoring of indium zinc oxide (IZO) through Al incorporation was studied and measured directly by ultraviolet photoelectron spectroscopy (UPS). Al doped IZO (AIZO) thin films have lower work function (3.90 eV) and wider bandgap (3.75 eV) compared with IZO (4.15 and 3.5 eV, respectively). These changes induced by Al incorporation would result in higher activation energy and higher flat voltage for AIZO TFTs, which may imply the origin of the AIZO TFTs electrical properties such as threshold voltage shift and off-state current decrease.

Graphical abstract: The energy band tailored by Al incorporation in solution-processed IZO TFTs

Article information

Article type
Paper
Submitted
29 Jan 2015
Accepted
17 Apr 2015
First published
17 Apr 2015

RSC Adv., 2015,5, 37635-37639

Author version available

The energy band tailored by Al incorporation in solution-processed IZO TFTs

Y. Gao, J. Lu, J. Zhang and X. Li, RSC Adv., 2015, 5, 37635 DOI: 10.1039/C5RA01800E

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