Issue 95, 2015

Probing the persistence of energy-level control effects at organic semiconductor/electrode interfaces based on photoemission spectroscopy combined with Ar gas cluster ion beam sputtering

Abstract

Oxygen (O2) plasma treatment is one of the most widely applied methods for modifying the electrode work function. However, owing to the instability of O2-plasma treatment effects under air-exposed conditions, it is necessary to confirm whether the O2-plasma treatment effects can be continuously maintained at organic semiconductor/electrode interfaces in realistic devices. In the present study, the electronic structures of organic semiconductor/O2-plasma treated electrode interfaces were characterized by using in situ deposition and ultraviolet photoemission spectroscopy analysis. The structures of the corresponding samples were re-analyzed after a 1-week-long exposure to air to confirm the energy-level changes. To achieve this, we inceptively designed the studies of the energy level alignments of air-exposed samples based on the photoemission spectroscopy combined with Ar gas cluster ion beam sputtering process. The results of our studies clearly confirm the consistency of O2-plasma treatment effects at organic semiconductor/electrode interfaces. In addition, we confirmed the preservation of controlled energy-level structures at C60/Au interfaces by examining the relative rates of electron transfer at the C60/Au interfaces, obtained from photoluminescence (PL) measurements.

Graphical abstract: Probing the persistence of energy-level control effects at organic semiconductor/electrode interfaces based on photoemission spectroscopy combined with Ar gas cluster ion beam sputtering

Article information

Article type
Paper
Submitted
21 Jul 2015
Accepted
09 Sep 2015
First published
09 Sep 2015

RSC Adv., 2015,5, 77814-77822

Author version available

Probing the persistence of energy-level control effects at organic semiconductor/electrode interfaces based on photoemission spectroscopy combined with Ar gas cluster ion beam sputtering

D. Yun, T. Shin, S. Park, Y. Shin, Y. Kyung, J. Chung and Y. Kim, RSC Adv., 2015, 5, 77814 DOI: 10.1039/C5RA14384E

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