Tailoring the electrical properties of multilayer MoS2 transistors using ultraviolet light irradiation

Abstract

Two dimensional layered semiconductor transition-metal dichalcogenides such as molybdenum disulfide (MoS₂) have attracted tremendous interest as a new class of electronic material and generated considerable attention as a promising channel material for field-effect transistors (FETs). Modulating the electronic properties of MoS₂ is essential in order to obtain the best performance of its electronic and optoelectronic devices as well as enabling fabrication of various complex devices. In this paper we report a very straightforward and simple technique to tailor the performance of multilayer (ML) MoS₂ FETs by exposure to nitrogen (N₂) gas under deep-ultraviolet (DUV) light. Threshold voltages of ML MoS₂ FETs shifted towards a negative gate voltage after exposure to N₂ gas in the presence of DUV light. We also observed that drain-to-source current, carrier density and charge-carrier mobility of ML MoS₂ are significantly improved after exposure to N₂ gas under DUV light irradiation.