Enhancement of thermoelectric performance of β-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd

Baojin Ren; Mian Liu; Xiaoguang Li; Xiaoying Qin; Di Li; Tianhua Zou; Guolong Sun; Yuanyue Li; Hongxing Xin; Jian Zhang

doi:10.1039/C5TA01778E

Enhancement of thermoelectric performance of β-Zn₄Sb₃ through resonant distortion of electronic density of states doped with Gd†

Baojin Ren,^a Mian Liu,^a Xiaoguang Li,^bc Xiaoying Qin,*^a Di Li,^a Tianhua Zou,^a Guolong Sun,^a Yuanyue Li,^a Hongxing Xin^a and Jian Zhang^a

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* Corresponding authors

^a Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Science, 230031 Hefei, P. R. China
E-mail: xyqin@issp.ac.cn
Fax: +86 0551 65591434
Tel: +86 0551 65592750

^b Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, 230026 Hefei, P. R. China

^c Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Abstract

The thermoelectric properties of Gd-doped β-Zn₄Sb₃ are investigated. The results indicate that Gd-doping not only causes a 41 μV K⁻¹ increase in thermopower owing to resonant distortion of DOS but also results in ∼15% reduction in thermal conductivity at a doping content of 0.2%. Consequently, a largest value of ZT = 1.2 is achieved at 655 K.

Journal of Materials Chemistry A

Enhancement of thermoelectric performance of β-Zn₄Sb₃ through resonant distortion of electronic density of states doped with Gd†

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Enhancement of thermoelectric performance of β-Zn₄Sb₃ through resonant distortion of electronic density of states doped with Gd

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Journal of Materials Chemistry A