Precise control of chemical vapor deposition graphene layer thickness using NixCu1−x alloys

Hyonkwang Choi; Yeongjin Lim; Minjeong Park; Sehui Lee; Younsik Kang; Min Su Kim; Jeongyong Kim; Minhyon Jeon

doi:10.1039/C4TC01979B

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Precise control of chemical vapor deposition graphene layer thickness using Ni_xCu_1−x alloys†

Hyonkwang Choi,‡^a Yeongjin Lim,‡^a Minjeong Park,^a Sehui Lee,^a Younsik Kang,^b Min Su Kim,^c Jeongyong Kim^c and Minhyon Jeon*^a

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* Corresponding authors

^a Department of Nanoscience and Engineering, Center for Nano Manufacturing, Inje University, 607 Obang-dong, Gimhae, Gyungnam 621-749, Republic of Korea
E-mail: mjeon@inje.ac.kr
Fax: +82 553203963
Tel: +82 553203672

^b Defense Unmanned Technology Center, Agency for Defense Development, Yuseong P.O. Box 35, Daejeon 305-600, Republic of Korea

^c Center for Integrated Nanostructure Physics (CINAP), Sungkyunkwan University, Suwon 440-746, Republic of Korea

Abstract

We investigated a simple but effective method to precisely control the desired number of graphene layers on the Ni_xCu_1−x alloy substrates by thermal chemical vapor deposition. Our method could be utilized to precisely control the number of graphene layers without altering growth conditions such as growth temperature and the cooling rate.

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Article information

DOI: https://doi.org/10.1039/C4TC01979B
Article type: Communication
Submitted: 04 Sep 2014
Accepted: 15 Jan 2015
First published: 16 Jan 2015

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J. Mater. Chem. C, 2015,3, 1463-1467

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Precise control of chemical vapor deposition graphene layer thickness using Ni_xCu_1−x alloys

H. Choi, Y. Lim, M. Park, S. Lee, Y. Kang, M. S. Kim, J. Kim and M. Jeon, J. Mater. Chem. C, 2015, 3, 1463 DOI: 10.1039/C4TC01979B

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Journal of Materials Chemistry C