Patterning of rubrene thin-film transistors based on electron irradiation of a polystyrene dielectric layer

Abstract

An unprecedented approach to fabricate patterned rubrene thin-film transistors (TFTs) is presented by combining an abrupt heating method with selective electron irradiation of polystyrene dielectric layers. We found that an amorphous rubrene is crystallized only on electron-irradiated polystyrene (PS) while no crystallization of rubrene occurs on unirradiated PS by the abrupt heating process. Based on this finding, a patterned rubrene semiconductor could be successfully fabricated by irradiating an electron beam onto selective regions of a PS layer followed by the abrupt heating process. The patterned rubrene TFTs exhibited good performances with charge mobilities of ∼1.3 cm² V⁻¹ s⁻¹ and on/off ratios higher than 10⁸.