Issue 19, 2015
From the journal:

Journal of Materials Chemistry C

Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

Matthias M. Minjauw, ORCID logo a   Jolien Dendooven,a   Boris Capon,a   Marc Schaekersb  and  Christophe Detavernier*a  

* Corresponding authors

a Department of Solid State Sciences, CoCooN, Ghent University, Krijgslaan 281 - S1, B-9000 Ghent, Belgium
E-mail: Christophe.Detavernier@ugent.be

b IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Abstract

A plasma enhanced ALD process for Ru using RuO4 and H2-plasma is reported at sample temperatures ranging from 50 °C to 100 °C. At 50 °C, low impurity content Ru thin films were grown with a saturated growth rate of 0.11 nm per cycle. A study of the influence of various process parameters on the Ru film properties is given.

Graphical abstract: Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

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Article information

DOI
https://doi.org/10.1039/C5TC00751H
Article type
Communication
Submitted
17 Mar 2015
Accepted
20 Apr 2015
First published
21 Apr 2015

J. Mater. Chem. C, 2015,3, 4848-4851

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Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

M. M. Minjauw, J. Dendooven, B. Capon, M. Schaekers and C. Detavernier, J. Mater. Chem. C, 2015, 3, 4848 DOI: 10.1039/C5TC00751H

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