Issue 47, 2015

Flexible organic transistors based on a solution-sheared PVDF insulator

Abstract

Organic field-effect transistors are demonstrated in which the insulator–semiconductor stack of the poly(vinylidene fluoride) (PVDF) and polystyrene (PS):dibenzo-tetrathiavulfalene (DB-TTF) blend is deposited by two low-cost and scalable solution shearing steps onto plastic substrates. The PS vertically phase separates upon coating the DB-TTF:PS blend solution and acts as a smoothening and depolarisation layer for the underlying PVDF. The transistors exhibit a mean mobility of 0.2 cm2 V−1 s−1, an on/off ratio of 104 and near-zero threshold voltage with high reproducibility, the same performance as on previously reported Si/SiO2 substrates.

Graphical abstract: Flexible organic transistors based on a solution-sheared PVDF insulator

Supplementary files

Article information

Article type
Communication
Submitted
11 Aug 2015
Accepted
03 Nov 2015
First published
04 Nov 2015
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2015,3, 12199-12202

Flexible organic transistors based on a solution-sheared PVDF insulator

S. Georgakopoulos, F. G. del Pozo and M. Mas-Torrent, J. Mater. Chem. C, 2015, 3, 12199 DOI: 10.1039/C5TC02488A

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