Issue 28, 2016
From the journal:

Chemical Communications

Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices†

Ruihong Zhang,a   Seonghyuk Cho,b   Daw Gen Lim,a   Xianyi Hu,a   Eric A. Stach,c   Carol A. Handwerkera  and  Rakesh Agrawal*b  

* Corresponding authors

a School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA
E-mail: ruihong.zhang.1@purdue.edu, handwerker@purdue.edu

b School of Chemical Engineering, Purdue University, West Lafayette, IN 47907, USA
E-mail: agrawalr@purdue.edu

c Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA
E-mail: estachbnl@gmail.com

Abstract

Bulk metals and metal chalcogenides are found to dissolve in primary amine–dithiol solvent mixtures at ambient conditions. Thin-films of CuS, SnS, ZnS, Cu2Sn(Sx,Se1−x)3, and Cu2ZnSn(SxSe1−x)4 (0 ≤ x ≤ 1) were deposited using the as-dissolved solutions. Cu2ZnSn(SxSe1−x)4 solar cells with efficiencies of 6.84% and 7.02% under AM1.5 illumination were fabricated from two example solution precursors, respectively.

Graphical abstract: Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

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Article information

DOI
https://doi.org/10.1039/C5CC09915C
Article type
Communication
Submitted
01 Dec 2015
Accepted
04 Mar 2016
First published
15 Mar 2016

Chem. Commun., 2016,52, 5007-5010

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Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

R. Zhang, S. Cho, D. G. Lim, X. Hu, E. A. Stach, C. A. Handwerker and R. Agrawal, Chem. Commun., 2016, 52, 5007 DOI: 10.1039/C5CC09915C

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