Issue 57, 2016

Passivation of surface states by ALD-grown TiO2 overlayers on Ta3N5 anodes for photoelectrochemical water oxidation

Abstract

This paper describes the fabrication of TiO2 overlayers by atomic layer deposition to passivate the surface states on Ta3N5 thin film anodes for photoelectrochemical water oxidation. The removal of surface states reduces the overpotential and decreases the density of surface recombination centers, resulting in enhanced activity through effective utilization of photogenerated charge carriers.

Graphical abstract: Passivation of surface states by ALD-grown TiO2 overlayers on Ta3N5 anodes for photoelectrochemical water oxidation

Supplementary files

Article information

Article type
Communication
Submitted
23 Apr 2016
Accepted
03 Jun 2016
First published
03 Jun 2016

Chem. Commun., 2016,52, 8806-8809

Passivation of surface states by ALD-grown TiO2 overlayers on Ta3N5 anodes for photoelectrochemical water oxidation

P. Zhang, T. Wang and J. Gong, Chem. Commun., 2016, 52, 8806 DOI: 10.1039/C6CC03411J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements