Issue 3, 2016

Dislocation strain as the mechanism of phonon scattering at grain boundaries

Abstract

Thermal conductivities of polycrystalline thermoelectric materials are satisfactorily calculated by replacing the commonly used Casimir model (freqeuncy-independent) with grain boundary dislocation strain model (frequency-dependent) of Klemens. It is demonstrated that the grain boundaries are better described as a collection of dislocations rather than perfectly scattering interfaces.

Graphical abstract: Dislocation strain as the mechanism of phonon scattering at grain boundaries

Article information

Article type
Communication
Submitted
14 Dec 2015
Accepted
22 Feb 2016
First published
26 Feb 2016

Mater. Horiz., 2016,3, 234-240

Author version available

Dislocation strain as the mechanism of phonon scattering at grain boundaries

H. Kim, S. D. Kang, Y. Tang, R. Hanus and G. Jeffrey Snyder, Mater. Horiz., 2016, 3, 234 DOI: 10.1039/C5MH00299K

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