Issue 34, 2016
From the journal:

RSC Advances

Linkage and donor–acceptor effects on resistive switching memory devices of 4-(N-carbazolyl)triphenylamine-based polymers†

Tzu-Tien Huang,‡a   Chia-Liang Tsai,‡a   Sheng-Huei Hsiao*b  and  Guey-Sheng Liou*a  

* Corresponding authors

a Institute of Polymer Science and Engineering, National Taiwan University, Taipei, Taiwan 10617
E-mail: gsliou@ntu.edu.tw

b Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei, Taiwan 10608
E-mail: shhsiao@ntut.edu.tw

Abstract

In order to gain deeper insight into the linkage effect and donor–acceptor effect on memory behavior (from DRAM to WORM), 4-(N-carbazolyl)triphenylamine-based polyimides and polyamides t-butyl-6FPI, t-butyl-DSPI, OMe-6FPI, OMe-DSPI, t-butyl-6FPA, t-butyl-DSPA, OMe-6FPA, and OMe-DSPA were synthesized and their memory behaviours were investigated.

Graphical abstract: Linkage and donor–acceptor effects on resistive switching memory devices of 4-(N-carbazolyl)triphenylamine-based polymers

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Article information

DOI
https://doi.org/10.1039/C6RA02349E
Article type
Paper
Submitted
26 Jan 2016
Accepted
08 Mar 2016
First published
11 Mar 2016

RSC Adv., 2016,6, 28815-28819

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Linkage and donor–acceptor effects on resistive switching memory devices of 4-(N-carbazolyl)triphenylamine-based polymers

T. Huang, C. Tsai, S. Hsiao and G. Liou, RSC Adv., 2016, 6, 28815 DOI: 10.1039/C6RA02349E

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