Strong modification of intrinsic spin Hall effect in FeMn with antiferromagnetic order formation

Abstract

FeMn films with and without a Cu seed layer were deposited on Y₃Fe₅O₁₂ (YIG) substrates, and their inverse spin Hall effect (ISHE) was examined through both spin Seebeck effect and spin pumping. From the ISHE voltage, the spin Hall angle of FeMn in YIG/Cu/FeMn is greatly enhanced with its polarity opposite to that in YIG/FeMn. Anisotropic magnetoresistance measurements on the samples with an additional NiFe layer show that the FeMn layers in YIG/Cu/FeMn and YIG/FeMn are antiferromagnetic and paramagnetic, respectively. The present work demonstrates that the antiferromagnetic order in FeMn alloy intensely influence its intrinsic spin Hall effect.