Low residual donor concentration and enhanced charge transport in low-cost electrodeposited ZnO

Abstract

High unintentional n-type doping and poor charge transport are key limitations in solution processed ZnO thin films. In this context, we report ZnO films with a low residual donor concentration and high texture, synthesized by low-cost electrodeposition on copper. They possess an equilibrium free electron concentration of ∼2.8 × 10¹⁴ cm⁻³ and a minimum electron mobility of 80 cm² V⁻¹ s⁻¹. The resulting Schottky diodes demonstrate rectification ratios of ∼10⁶, ideality factors of ∼2, and low on-state resistance.