Terahertz photodetector arrays based on a large scale MoSe2 monolayer

Abstract

Large domains of monolayered transition-metal dichalcogenides (TMDCs) have emerged as exciting materials because of their potential to provide a platform for ultrathin circuits and optoelectronics systems. Herein, we report ambient pressure chemical vapor deposition (CVD) growth of large scale MoSe₂ film for terahertz (THz) applications. Arrays of 100 × 60 μm MoSe₂ rectangle layers were etched out and field effect transistors (FETs) were fabricated on these arrays. The device exhibits current on/off ratio of ∼10⁴. The THz photoresponse of the devices was studied and a THz responsivity of ∼38 mV W⁻¹ was demonstrated, suggesting that TMDCs can be promising materials for long wavelength optoelectronic applications.