Issue 26, 2017

The structure and opto–thermo electronic properties of a new (Bi(Bi2S3)9I3)2/3 hexagonal nano-/micro-rod

Abstract

The semiconductor optoelectronic properties of an inorganic (Bi(Bi2S3)9I3)2/3 hexagonal nano-/micro-rod are firstly explored herein. Transmittance and thermoreflectance measurements show that (Bi(Bi2S3)9I3)2/3 hexagonal rods possess an indirect gap of 0.73 eV and a direct gap of 1.08 eV, respectively. Hot-probe measurements of (Bi(Bi2S3)9I3)2/3 reveal the p-type semiconductor behavior and high thermoelectric voltage. Polarized Raman measurements of the m-plane (Bi(Bi2S3)9I3)2/3 (along c and perpendicular to the c axis) identify the structural anisotropy of the hexagonal nano-/micro-rod.

Graphical abstract: The structure and opto–thermo electronic properties of a new (Bi(Bi2S3)9I3)2/3 hexagonal nano-/micro-rod

Supplementary files

Article information

Article type
Communication
Submitted
23 Jan 2017
Accepted
06 Mar 2017
First published
08 Mar 2017

Chem. Commun., 2017,53, 3741-3744

The structure and opto–thermo electronic properties of a new (Bi(Bi2S3)9I3)2/3 hexagonal nano-/micro-rod

C. Ho, Y. Chen, Y. Kuo and C. W. Liu, Chem. Commun., 2017, 53, 3741 DOI: 10.1039/C7CC00627F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements