Issue 27, 2017

A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2

Abstract

A new square-planar zinc oxyhalide, Sr2ZnO2Cl2, was successfully synthesized using a high-pressure method. Absorption spectroscopy revealed an indirect band gap of 3.66 eV. Electronic structure calculations indicated a strong hybridization between Zn 3dx2y2 and O 2p orbitals, which is distinct from tetrahedrally coordinated ZnO.

Graphical abstract: A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2

Supplementary files

Article information

Article type
Communication
Submitted
08 Feb 2017
Accepted
12 Mar 2017
First published
13 Mar 2017

Chem. Commun., 2017,53, 3826-3829

A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2

Y. Su, Y. Tsujimoto, A. Miura, S. Asai, M. Avdeev, H. Ogino, M. Ako, A. A. Belik, T. Masuda, T. Uchikoshi and K. Yamaura, Chem. Commun., 2017, 53, 3826 DOI: 10.1039/C7CC01011G

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