Issue 1, 2017

Ultra-fast preparation of high-performance thermoelectric bulk TiNiSb0.05Sn0.95 by microwave synthesis

Abstract

The antimony-doped half-Heusler thermoelectric bulk TiNiSb0.05Sn0.95 was prepared via ultra-fast 4.5 min microwave synthesis, cold-press forming and 20 min microwave pressureless sintering. The electrical properties i.e. the Seebeck coefficient (S), electrical resistivity (ρ), and carrier concentration (n) and mobility (μ) were measured on a Seebeck coefficient/resistance analysis system (S/RAs) and Hall effect measurement system (HEMS), respectively. The thermal conductivity (κ) was measured on a laser flash thermal analyzer (LFA). The results show that a high purity single phase was obtained after microwave sintering. The electrical resistivity is 2.70–5.33 μΩ m at temperatures ranging from ∼300 to 773 K. The highest power factor of 4042 μW m−1 K−2 was achieved at 473 K. The microstructure analyses show that numerous circular intercrystalline pores caused by microwave sintering are present within the TiNiSn grains. The lattice and total thermal conductivity are 1.76–3.77 and 4.66–5.98 W m−1 K−1. The highest thermoelectric figure of merit of 0.44 was achieved at 623 K.

Graphical abstract: Ultra-fast preparation of high-performance thermoelectric bulk TiNiSb0.05Sn0.95 by microwave synthesis

Article information

Article type
Communication
Submitted
04 Nov 2016
Accepted
20 Nov 2016
First published
21 Nov 2016

Dalton Trans., 2017,46, 33-38

Ultra-fast preparation of high-performance thermoelectric bulk TiNiSb0.05Sn0.95 by microwave synthesis

Y. Li, C. Cheng, Y. Lei, M. Wang and R. D. Wan, Dalton Trans., 2017, 46, 33 DOI: 10.1039/C6DT04218J

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