Low temperature fabrication of thermochromic VO2 thin films by low-pressure chemical vapor deposition

Abstract

VO₂(M) is of special interest as the material with the most potential for future application in smart windows and switching devices. However, a number of drawbacks need to be overcome, including the high processing temperature of current synthesis techniques and low thermochromic properties. This work reports the fabrication of high-performance thermochromic VO₂ thin films at low temperatures below 400 °C based on a low-pressure chemical vapor deposition (LPCVD) with a vanadium(III) acetylacetonate precursor. Proper tuning of the process parameters is found to be critical in fabricating thickness-controllable highly-crystalline VO₂ films. For an ∼62 nm thick VO₂ film, visible transmittances of 52.3% (annealed at 400 °C) and 52.7% (annealed at 350 °C) were obtained. The corresponding solar energy modification abilities (ΔT_sol) were 9.7% and 7.1%, and the transition temperatures were 45.1 °C and 50.9 °C. The underlying microscopic mechanism was studied by first-principles calculations and the results indicated that improved performances, including a low transition temperature, could be achieved by properly controlling the annealing temperature, ascribed to the combined effect of strain and oxygen vacancies. Moreover, the initial use of a pre-grown seed layer induced fast grain growth, which is favorable for further decreasing the deposition and annealing temperature to 325 °C.