Electrode buffer layers producing high performance nonvolatile organic write-once-read-many-times memory devices

Abstract

CuI and Bphen are adopted as the electrode buffer layers for a PbPc/F₁₆CuPc heterojunction based nonvolatile organic write-once-read-many-times memory device, which improve the ON/OFF ratio up to one order of magnitude while significantly reducing the threshold voltage compared to the non-buffer-layer counterpart.