Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

Abstract

A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM). After the SCF-nitridation treatment, the memory window for the N:ITO electrode device was increased from 40 to 100. Moreover, the operation voltages (V_SET and V_RESET) and currents (I_ON and I_OFF) were remarkably decreased, in which the I_OFF was decreased to 65 nA. The possible reason for the performance improvement of resistive switching memory with the ITO transparent electrode induced by SCF-nitridation treatment was carefully explored.