Issue 61, 2017, Issue in Progress

High electron mobility of β-HgS colloidal quantum dots with doubly occupied quantum states

Abstract

Electron occupation of the lowest electronic state of the conduction band (1Se) of a semiconducting nanocrystal offers numerous opportunities to efficiently utilize the quantization of the colloidal quantum dot. The steady-state electron occupation of the 1Se gives rise to unprecedented electrical, optical, and magnetic properties. We report an electron mobility of ∼1.29 cm2 V−1 s−1 measured in a mercury sulfide (β-HgS) quantum dot field effect transistor (FET), demonstrating the best carrier mobility for the HgS colloidal nanocrystal solid. The high electron mobility of the HgS nanocrystals with the doubly occupied quantum state originates from the efficient ligand exchange from oleylamine to thiocyanate, better carrier hopping via shortened inter-dot-distance, and the packing of nanocrystals by optimized thermal annealing conditions.

Graphical abstract: High electron mobility of β-HgS colloidal quantum dots with doubly occupied quantum states

Supplementary files

Article information

Article type
Paper
Submitted
29 Jun 2017
Accepted
26 Jul 2017
First published
04 Aug 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 38166-38170

High electron mobility of β-HgS colloidal quantum dots with doubly occupied quantum states

J. Kim, B. Yoon, J. Kim, Y. Choi, Y. Kwon, S. K. Park and K. S. Jeong, RSC Adv., 2017, 7, 38166 DOI: 10.1039/C7RA07193K

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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