Correction: Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

Xue-feng She; Jingsong Wang; Qingguo Xue; Wentao Xu

doi:10.1039/C7RA90001E

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Correction: Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

Xue-feng She,^ab Jingsong Wang,^a Qingguo Xue^a and Wentao Xu*^bc

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* Corresponding authors

^a State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing (USTB), Beijing 100083, China

^b Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, Gyungbuk 790-784, Republic of Korea
E-mail: wentao@postech.ac.kr

^c Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA

Abstract

Correction for ‘Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors’ by Xue-feng She et al., RSC Adv., 2016, 6, 114593–114598.

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Raw product of rare-earth ore works as a high-k gate insulator for low-voltage o…

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DOI: https://doi.org/10.1039/C7RA90001E
Article type: Correction
Submitted: 03 Jan 2017
Accepted: 03 Jan 2017
First published: 10 Jan 2017
This article is Open Access

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RSC Adv., 2017,7, 4645-4645

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Correction: Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

X. She, J. Wang, Q. Xue and W. Xu, RSC Adv., 2017, 7, 4645 DOI: 10.1039/C7RA90001E

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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Correction: Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

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