Understanding the fast crystallization kinetics of In–Sb–Te by using ultrafast calorimetry

Abstract

Obtaining information about crystallization kinetics is crucial to understand the transformation speed of phase-change materials and select materials for phase-change memory. In the current work, we first investigated the temperature dependence of the resistance of undoped and In-doped Sb₄Te films and found that the crystallization temperature (T_p) and 10-year data retention of Sb₄Te increased significantly when it was doped with In. We further employed ultrafast differential scanning calorimetry to explore the crystallization kinetics of In-doped Sb₄Te with various compositions, and found In₂₀(Sb₄Te)₈₀ to have has the fastest crystallization rate (∼7.1 m s⁻¹ at 726.2 K). The In₂₀(Sb₄Te)₈₀ film exhibited a high T_p (∼503 K), better data retention ability (∼418.7 K for 10 years), and ultrafast crystallization with strong non-Arrhenius behavior. These results indicated In₂₀(Sb₄Te)₈₀ to be a promising candidate for use in applications of phase change materials.