Issue 13, 2018

Incorporation of indium into ε-gallium oxide epitaxial thin films grown via mist chemical vapour deposition for bandgap engineering

Abstract

Epitaxial ε-gallium oxide (Ga2O3) thin films incorporated with In were successfully grown by mist chemical vapour deposition (CVD) on c-plane sapphire substrates for bandgap tuning. In was successfully incorporated into epitaxial ε-(InxGa1−x)2O3 films at an In composition of x = 0.2 without inducing phase separation. Phase separation originated from the (400) bixbyite structure of (InxGa1−x)2O3 when x > 0.2. The solubility limit of In incorporated into ε-Ga2O3 on sapphire substrates via mist CVD was therefore x = 0.2. Transmission electron microscopy measurements revealed that ε-(InxGa1−x)2O3 consisted of polycrystalline phases observed in the interface of the sapphire substrate and ε-phases located above the polycrystalline phase. The pole figure of ε-(InxGa1−x)2O3 thin films revealed that the epitaxial relationship between the ε-(InxGa1−x)2O3 thin film and the α-Al2O3 substrate is (001) ε-(InxGa1−x)2O3 [130]||(0001) α-Al2O3 [11−20]. The optical bandgap of the ε-(InxGa1−x)2O3 thin films was tuned from 4.5 to 5.0 eV without inducing phase separation.

Graphical abstract: Incorporation of indium into ε-gallium oxide epitaxial thin films grown via mist chemical vapour deposition for bandgap engineering

Article information

Article type
Paper
Submitted
05 Dec 2017
Accepted
16 Feb 2018
First published
16 Feb 2018

CrystEngComm, 2018,20, 1882-1888

Incorporation of indium into ε-gallium oxide epitaxial thin films grown via mist chemical vapour deposition for bandgap engineering

H. Nishinaka, N. Miyauchi, D. Tahara, S. Morimoto and M. Yoshimoto, CrystEngComm, 2018, 20, 1882 DOI: 10.1039/C7CE02103H

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